INDUSTRY SOLUTIONS / SEMICONDUCTOR

Semiconductor industry solutions

Overview

In 1947, Bell Labs developed the first transistor, initiating the rapid growth of technology in the semiconductor and electronics industries. In 1958, Jack Kilby in Texas Instruments designed the world's first integrated circuit by integrating a transistor and three resistors and a capacitor onto a germanium wafer.  Immediately thereafter, Robert Noyce in Fairchild Semiconductor developed a planar double-diffused silicon integrated circuit, and eventually silicon succeeded as an electronic material, which opened the Moore era. Of course, the market drive is the most direct driving force for technological advancement and innovation! Semiconductors are widely used in consumer electronics, communication systems, medical instruments and other fields. For example, a diode is a device fabricated by semiconductors. From the perspective of technology or economic development, the importance of semiconductors is enormous. Most of today's electronic products, such as, core unit in computers, mobile phones or digital recorders, have a very close relationship with semiconductors.

Abilities and advantages

As an automation distributor, we are also committed to the development of industrial automation and becoming the most valuable supplier of power, control and information technology solutions to our customers. Technological innovations in the semiconductor electronics industry and advances in automation technology complement each other.  

Advantages

  • The system based on an integrated architecture provides users with more efficient, more reliable and simpler solutions, which further improves the reliability, usability and maintainability of the machine, reduces the overall engineering cost of the user, and accelerates the input of OEM equipment into the market.
  • Visual report, network communication, field layer and information layer are seamlessly integrated to realize optimal management and operation of resources.

 Industry case

Multi-wire wafer cutting machine control scheme

Principle

The multi-groove roller drives the cutting line uniformly wound thereon for high-speed movement, and the abrasive slurry adhered on the cutting line produces a grinding action on the workpiece under cutting, thereby achieving the purpose of flaky cutting of the silicon crucible. In order to save material maximally, the substrate thickness was reduced from the original 300 µm to 200 µm, and might develop even to 100 µm. Therefore, the tension of cutting line and feed speed of workpiece will directly affect the cutting quality and output, and good tension control is provided by the speed synchronization and torque control between axes. The Kinetix motion control platform supports the virtual axis, which is a unified reference axis and synchronizes n:m control via the electronic gear MAG instruction.  Powerflex frequency inverter has a built-in function of speed fine-tuning, which can precisely control the speed of winding/unwinding; The load detection function assists in line break detection; In the vector control mode, FORCE ™ technology is provided with the control performance similar to DC motor, achieving full torque output at the zero speed.

System advantages

  • Maximally reduce equipment downtime rate to ensure its usability:

-Ehternet/IP ring network technology DLR with medium redundancy features

-SEMI-F47 standard certification to avoid shutdown or impact on equipment caused by temporary voltage sag

  • Reduce overall ownership engineering costs of OEM and end-users

- A control platform and a network to provide a variety of control functions and reduce hardware investment

- Tag programming mode based on Power Programming to save delivery time

- ADC (Automatic Device Configuration) function to enhance equipment maintenance and usability

System framework

Production and application of monocrystalline silicon

Principle

In the control system of single crystal furnace, the main control objects are liquid surface temperature, seed drawing speed and crystal rod diameter; Auxiliary control objects include seed rotation speed, crucible lifting and rotation speed, argon flow rate and furnace vacuum. Three PIDs are used in the system to control temperature, speed and their coupling. Firstly, the velocity is used to control the diameter change of the crystal, so that the diameter of the crystal will not change abruptly, and then get close to the target diameter. According to the requirements of process for crystal arrangement, the drawing speed must be kept within the range of formula parameters in the process of growth. Without a combination of other factors in the process of controlling the diameter, the average drawing speed can not meet the technological requirements. Therefore, we use temperature change to control the average drawing speed of the crystal, so as to make the diameter and the drawing speed meet the technological requirements.

System architecture

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